Giga-bit rate receiver OEICs grown by OMVPE for long-wavelength optical communications

Author

Hayashi, H. ; Yano, H. ; Aga, K. ; Kamei, H. ; Sasaki, G.

Author_Institution

Optoelectron. R&D Lab., Sumitomo Electric Ind. Ltd., Yokohama, Japan

Volume

138

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

164

Lastpage

170

Abstract

Receiver optoelectronic integrated circuits (OEICs) in which AlInAs/GaInAs HEMTs and GaInAs pin PDs were integrated monolithically on InP substrates were studied. Good uniformity of device characteristics over a 2-inch whole wafer was obtained. Three different types of receiver circuits, i.e high impedance type, trans-impedance type, and straightforward termination type, were fabricated and are discussed. The sensitivity of -30.4 dBm was obtained for 1.2 Gbit/s NRZ signals from the high-impedance type OEIC, into which an equaliser was also integrated. These performances are good enough for practical use in optical communication systems operating at giga-bit/s data rates

Keywords

field effect integrated circuits; integrated optoelectronics; optical communication equipment; photodiodes; receivers; AlInAs-GaInAs; HEMTs; InP substrates; NRZ signals; device characteristics; equaliser; giga-bit/s data rates; high impedance type; integrated monolithically; optical communication systems; optoelectronic integrated circuits; photodiodes; pin PDs; receiver OEICs; receiver circuits; sensitivity; termination type; trans-impedance type;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

68378