Title :
Strained GaInAs-base hot electron transistor
Author :
Hase, I. ; Taira, K. ; Kawai, Hiroyuki ; Watanabe, Toshio ; Kaneko, Kunihiko ; Watanabe, N.
Author_Institution :
Sony Corp. Res. Center, Yokohama
fDate :
3/3/1988 12:00:00 AM
Abstract :
A hot electron transistor (HET) which has a strained GaInAs base and a graded AlGaAs collector barrier was grown on a GaAs substrate by metalorganic chemical vapour deposition. In this device, the difference in energy levels between the L-band minima of the base and the top of the collector barrier is wider than that in GaAs-base HETs, which results in a common emitter current gain β (collector current/base current) as high as 30
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; chemical vapour deposition; gallium arsenide; hot carriers; indium compounds; GaAs substrate; GaInAs base; HET; L-band minima; MOCVD; common emitter current gain; current gain 30; difference in energy levels; graded AlGaAs collector barrier; hot electron transistor; metalorganic chemical vapour deposition; strained GaInAs base;
Journal_Title :
Electronics Letters
