DocumentCode
1393915
Title
GaAs monolithic integrated photoreceiver for 0.8 μm wavelength: association of Schottky photodiode and FET
Author
Verriele, H. ; Lorriaux, J.L. ; Legry, P. ; Gouy, J.P. ; Vilcot, J.P. ; Decoster, D.
Author_Institution
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lilles, Villeneuve d´´Ascq, France
Volume
135
Issue
2
fYear
1988
fDate
4/1/1988 12:00:00 AM
Firstpage
92
Lastpage
95
Abstract
The authors report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to -30 dBm can be achieved at 250 Mbit/s for a 1E-9 bit error rate
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; optical communication equipment; photodiodes; receivers; 0.8 micron; 250 Mbit/s; FET; GaAs photoreceiver; Schottky photodiode; dynamic properties; field-effect transistor; integrated circuit; monolithic integrated photoreceiver; noise properties; semiconductor; static properties;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
6840
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