• DocumentCode
    139403
  • Title

    Evaluation of FET performance and restrictions by low-frequency measurements

  • Author

    Vadala, Valeria ; Raffo, Antonio ; Colantonio, P. ; Cipriani, Elisa ; Giannini, F. ; Lanzieri, C. ; Pantellini, A. ; Nalli, Andrea ; Bosi, Gianni ; Vannini, Giorgio

  • Author_Institution
    Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
  • fYear
    2014
  • fDate
    2-4 April 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 × 1000 μm2GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device measurement; wide band gap semiconductors; FET performance; GaN; HEMT; high electron mobility transistors; low-frequency measurements; Current measurement; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Power generation; Semiconductor device measurement; GaN HEMTs; Semiconductor device measurements; microwave amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
  • Conference_Location
    Leuven
  • Type

    conf

  • DOI
    10.1109/INMMIC.2014.6815070
  • Filename
    6815070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=139403