Title :
A neural network approach for nonlinear modelling of LDMOSFETs
Author :
Marinkovic, Zlatica ; Crupi, Giovanni ; Raffo, Antonio ; Bosi, Gianni ; Avolio, Gustavo ; Markovic, Vera ; Caddemi, Alina ; Vannini, Giorgio ; Schreurs, Dominique M. M.-P
Author_Institution :
Fac. of Electron. Eng., Univ. of Nis, Niš, Serbia
Abstract :
In this paper an artificial neural network approach for nonlinear modelling of a 10-W LDMOSFET is presented. The model extraction is based on DC and scattering parameter measurements. In particular, artificial neural networks are used to model the dependence of both DC drain current and intrinsic capacitances with respect to the intrinsic gate and drain voltages. The model validation is successfully achieved by comparing the simulation results with time-domain nonlinear measurements.
Keywords :
MOSFET; S-parameters; electronic engineering computing; neural nets; semiconductor device models; DC drain current; LDMOSFET; artificial neural network; model extraction; model validation; nonlinear modelling; power 10 W; scattering parameter measurements; time-domain nonlinear measurements; Artificial neural networks; Computational modeling; Integrated circuit modeling; Microwave transistors; Transistors; Voltage measurement; artificial neural network (ANN); high-power transistor; laterally diffused MOS (LDMOS); nonlinear measurements; nonlinear modelling;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location :
Leuven
DOI :
10.1109/INMMIC.2014.6815074
