• DocumentCode
    139416
  • Title

    Characterization of charge-trapping effects in GaN FETs through low-frequency measurements

  • Author

    Bosi, Gianni ; Raffo, Antonio ; Nalli, Andrea ; Vadala, Valeria ; Vannini, Giorgio

  • Author_Institution
    Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
  • fYear
    2014
  • fDate
    2-4 April 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, an empirical characterization technique of charge-trapping effects in GaN FETs based on low-frequency measurements is proposed. It is applied on a 0.25 × 600 μm2GaN HEMT. Experimental results confirm theoretical assumptions reported in literature.
  • Keywords
    III-V semiconductors; electron traps; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; FET; GaN; charge trapping effects; field effect transistors; low-frequency measurements; Charge carrier processes; Current measurement; Gallium nitride; HEMTs; Load modeling; Performance evaluation; Field effect transistors (FETs); gallium nitride; semiconductor device measurements; semiconductor device modeling; trapping effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
  • Conference_Location
    Leuven
  • Type

    conf

  • DOI
    10.1109/INMMIC.2014.6815078
  • Filename
    6815078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=139416