Title :
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements
Author :
Bosi, Gianni ; Raffo, Antonio ; Nalli, Andrea ; Vadala, Valeria ; Vannini, Giorgio
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
In this paper, an empirical characterization technique of charge-trapping effects in GaN FETs based on low-frequency measurements is proposed. It is applied on a 0.25 × 600 μm2GaN HEMT. Experimental results confirm theoretical assumptions reported in literature.
Keywords :
III-V semiconductors; electron traps; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; FET; GaN; charge trapping effects; field effect transistors; low-frequency measurements; Charge carrier processes; Current measurement; Gallium nitride; HEMTs; Load modeling; Performance evaluation; Field effect transistors (FETs); gallium nitride; semiconductor device measurements; semiconductor device modeling; trapping effects;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location :
Leuven
DOI :
10.1109/INMMIC.2014.6815078
