Title :
Analysis of the influence of dark current on the performance of optical receivers employing superlattice APDs
Author :
O´Reilly, J.J. ; Fyath, R.S.
Author_Institution :
Sch. of Electron. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK
fDate :
4/1/1988 12:00:00 AM
Abstract :
Formulas are derived for the effective mean value and effective excess-noise factor associated with dark-current induced hole-electron pairs and these are used to study the influence of dark current, and residual hole ionisation on device and receiver performance for superlattice avalanche photodiodes (APDs). The analysis should provide useful guidelines for the design of high performance superlattice APDs and receivers
Keywords :
avalanche photodiodes; optical communication equipment; receivers; semiconductor superlattices; dark current; device performance; excess-noise factor; induced hole-electron pairs; optical receivers; residual hole ionisation; superlattice APDs; superlattice avalanche photodiodes;
Journal_Title :
Optoelectronics, IEE Proceedings J
