Title :
A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s
Author :
Albers, Jens N. ; Schreiber, Hans-Ulrich
Author_Institution :
Ruhr Univ. Bochum, Germany
fDate :
6/1/1991 12:00:00 AM
Abstract :
A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 μm lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 μm lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; multiplexing equipment; optical communication equipment; photolithography; silicon; 10 to 12 Gbit/s; 2 micron; Si bipolar technology; circuit simulations; multiplexer; optical fiber transmission rates; photolithography; Bipolar transistors; Bit rate; Capacitance; Circuits; Etching; Lithography; Metallization; Multiplexing; Optical fibers; Paper technology;
Journal_Title :
Selected Areas in Communications, IEEE Journal on
