A dual-band outphasing transmitter using broadband class E power amplifiers

Author

Ruiz, M.N. ; Morante, R. ; Rizo, L. ; Garcia, J.A. ; Gilabert, Pere L. ; Montoro, Gabriel

Author_Institution

Dept. Commun. Eng., Univ. Cantabria, Santander, Spain

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zero-voltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles. Average drain efficiency figures over 68% and 38% have been measured for WCDMA signals with a peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB, respectively.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; transmission lines; wide band gap semiconductors; GaN; HEMT devices; PAPR; RF PA; WCDMA signals; broadband class E power amplifiers; drain impedance loci; dual-band outphasing transmitter; dynamic range profiles; electrical lengths; frequency 770 MHz; frequency 960 MHz; nominal zero-voltage; nominal zero-voltage conditions; peak-to-average power ratio; reactive combiner; transmission lines; zero-voltage-derivative class E conditions; Broadband amplifiers; Impedance; Power amplifiers; Power generation; Radio frequency; Transmitters; Chireix; GaN HEMT; class E; efficiency; outphasing transmitter; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on

Conference_Location

Leuven

Type

conf

DOI

10.1109/INMMIC.2014.6815087

Filename

6815087