• DocumentCode
    1394319
  • Title

    40 Gbit/s EAM driver IC in SiGe bipolar technology

  • Author

    Schmid, R. ; Meister, T.F. ; Rest, M. ; Rein, H.M.

  • Author_Institution
    Ruhr-Univ., Bochum, Germany
  • Volume
    34
  • Issue
    11
  • fYear
    1998
  • fDate
    5/28/1998 12:00:00 AM
  • Firstpage
    1095
  • Lastpage
    1097
  • Abstract
    An SiGe bipolar IC for directly driving a differential electroabsorption modulator (EAM) in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to 2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; digital communication; driver circuits; electro-optical modulation; electroabsorption; optical communication equipment; semiconductor materials; time division multiplexing; 0 to -2 V; 2.5 V; 40 Gbit/s; SiGe; SiGe bipolar technology; active network; adjustable modulator bias voltage; differential electroabsorption modulator; driver IC; fibre optic TDM system;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980786
  • Filename
    684532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394319