• DocumentCode
    1394339
  • Title

    Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130

  • Author

    Allen, Gregory R. ; Edmonds, Larry ; Tseng, Chen Wei ; Swift, Gary ; Carmichael, Carl

  • Author_Institution
    Jet Propulsion Lab., Pasadena, CA, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3426
  • Lastpage
    3431
  • Abstract
    Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.
  • Keywords
    embedded systems; error correction; error detection; nuclear electronics; random-access storage; Xilinx XQR5VFX130; embedded block random random access memory; on-chip error correction; on-chip error detection; single-event upset cross section; Field programmable gate arrays; Random access memory; Single event upset; Error detect and correct; field programmable gate arrays (FPGA); single-event effects (SEV); upset mitigation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2085447
  • Filename
    5657995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394339