Title :
Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130
Author :
Allen, Gregory R. ; Edmonds, Larry ; Tseng, Chen Wei ; Swift, Gary ; Carmichael, Carl
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
Abstract :
Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.
Keywords :
embedded systems; error correction; error detection; nuclear electronics; random-access storage; Xilinx XQR5VFX130; embedded block random random access memory; on-chip error correction; on-chip error detection; single-event upset cross section; Field programmable gate arrays; Random access memory; Single event upset; Error detect and correct; field programmable gate arrays (FPGA); single-event effects (SEV); upset mitigation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2085447
