Title :
Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers
Author :
Savolainen, P. ; Toivonen, M. ; Kongas, J. ; Pessa, M. ; Corvini, P. ; Jansen, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
5/28/1998 12:00:00 AM
Abstract :
The record quantum efficiency operation of 680 nm GaInP/AlGaInP singlemode lasers is reported. A low threshold current of 40 mA and a very high quantum efficiency of 46% per facet were measured for a 5×500 μm2 as-cleaved ridge waveguide laser. For the AR/HR coated devices a quantum efficiency as high as 92% was achieved
Keywords :
aluminium compounds; gallium compounds; indium compounds; laser modes; ridge waveguides; semiconductor lasers; waveguide lasers; 40 mA; 680 nm; 92 percent; AR/HR coated devices; GaInP-AlGaInP; per facet efficiency; quantum efficiency; ridge waveguide singlemode lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980761
