Title :
Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode
Author :
Nakamura, F. ; Kobayashi, T. ; Tojo, T. ; Asatsuma, T. ; Naganuma, K. ; Kawai, H. ; Ikeda, M.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
5/28/1998 12:00:00 AM
Abstract :
The room-temperature pulsed operation of a five GaInN multiple-quantum-well (MQW) laser diode (LD) is reported. The lowest threshold current density was 9.5 kA/cm2. The highest external differential quantum efficiency was 49% for a 1 mm long cavity. The laser wavelength was 417.5 nm with a full width at half maximum (FWHM) of less than the spectrum resolution of 0.2 nm. The characteristic temperature was 185 K. Pulsed operation of the LD up to 80°C was demonstrated. Laser operation was confirmed with a duty cycle up to 10%
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; quantum well lasers; 185 K; 417.5 nm; 49 percent; GaInN; characteristic temperature; duty cycle; external differential quantum efficiency; full width at half maximum; laser wavelength; multiple-quantum-well laser diode; room-temperature pulsed operation; spectrum resolution; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980759
