Over 10 Gb/s regenerators using monolithic ICs for lightwave communication systems

Author

Hagimoto, Kazuo ; Miyagawa, Yuuzou ; Miyamoto, Yutaka ; Ohhata, Masanobu ; Suzuki, Tatsuhito ; Kikuchi, Hiroyuki

Author_Institution

NTT Transmission Syst. Lab., Kanagawa, Japan

Volume

9

Issue

5

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

673

Lastpage

682

Abstract

The design and performance of repeater circuits based on Si and GaAs MESFET process technologies are described. Repeater circuits were designed and fabricated for around 10 Gb/s repeater systems using Si and GaAs IC processes. The Si ICs operated up to 9 Gb/s, and the GaAs ICs exceeded 10 Gb/s. It was verified that regenerative repeater systems using these ICs and optical amplifiers exhibit a stable operation at 10 Gb/s. The performance of the 10 Gb/s repeater using these monolithic ICs and photonic circuits is discussed

Keywords

field effect integrated circuits; optical communication equipment; repeaters; 10 Gbit/s; GaAs; MESFET process technologies; Si; design; lightwave communication systems; monolithic integrated circuits; optical amplifiers; performance; regenerative repeater systems; repeater circuits; Circuits; Gallium arsenide; High speed optical techniques; High-speed electronics; Laboratories; Large scale integration; Optical fibers; Productivity; Repeaters; Stimulated emission;

fLanguage

English

Journal_Title

Selected Areas in Communications, IEEE Journal on

Publisher

ieee

ISSN

0733-8716

Type

jour

DOI

10.1109/49.87635

Filename

87635