Investigation and Analysis of LM124 Bipolar Linear Circuitry Response Phenomenon in Pulsed X-Ray Environment

Author

Roche, Nicolas J H ; Dusseau, L. ; Vaillé, J-R ; Mekki, J. ; Velo, Y. Gonzalez ; Perez, S. ; Boch, J. ; Saigné, F. ; Marec, R. ; Calvel, P. ; Bezerra, F. ; Auriel, G. ; Azaïs, B.

Author_Institution

Univ. Montpellier II, Montpellier, France

Volume

57

Issue

6

fYear

2010

Firstpage

3392

Lastpage

3399

Abstract

Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.

Keywords

X-ray apparatus; bipolar integrated circuits; dosimetry; radiation hardening (electronics); ASET simulation tool; ATREE; LM124 bipolar linear circuitry response phenomenon; LM124 operational amplifier; analog transient radiation effects in electronics; flash X-ray facility; high dose-rate X-ray pulse level; parasitic pulse signal; pulsed X-ray environment; semiempirical physical model; Analog integrated circuits; Integrated circuit modeling; Radiation effects; Single event transient; Transient response; Bipolar analog integrated circuits; integrated circuit modeling; ionizing dose; single event transient; transient propagation; transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2089063

Filename

5658011