Nonlinear characterization of microwave power amplifiers with supply modulation

In this paper, we perform a simultaneous low- and high-frequency characterization of a microwave power amplifier (PA) circuit under dynamic biasing conditions. Particular attention is paid to the drain bias port characterization and the effects of the dynamic biasing on the radio-frequency (RF) behavior of the PA under test. Experimental results are obtained in order to evaluate the long-term memory effects and the LF-to-RF conversion function, providing an innovative approach for characterizing supply modulated PAs.