Title :
Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs
Author :
McMorrow, Dale ; Warner, Jeffrey ; DasGupta, Sandeepan ; Ramachandran, Vishwa ; Boos, J. Brad ; Reed, Robert ; Schrimpf, Ronald ; Paillet, Philippe ; Ferlet-Cavrois, Veronique ; Baggio, Jacques ; Buchner, Stephen ; El-Mamouni, Farah ; Raine, Melanie ; Duh
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
High-bandwidth (16 GHz) time-resolved charge-collection measurements for heavy-ion irradiation of up to 70 GeV/amu are performed on low-power 6.1 Å lattice spacing InAlSb/InAs HEMT devices. Event cross sections are measured to be significantly larger than the active areas of the devices. Novel energy-dependent effects are observed.
Keywords :
III-V semiconductors; charge measurement; high electron mobility transistors; indium compounds; ion beam effects; low-power electronics; HEMT device; InAlSb-InAs; bandwidth 16 GHz; distance 6.1 A; energy-dependent effects; heavy-ion irradiation; heavy-ion-induced transient measurement; high-bandwidth time-resolved charge-collection measurement; lattice spacing; HEMTs; Indium compounds; Ion radiation effects; Single event transient; Charge collection; high-electron-mobility transistor (HEMT); indium arsenide (InAs); ion radiation effects; single-event effect (SEE); single-event transient;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2086487
