• DocumentCode
    1394556
  • Title

    Transimpedance amplifiers fabricated with In0.52Al0.48As/In0.53Ga0.47 As doped-channel heterostructures

  • Author

    Feng-Tso Chien ; Yi-Jen Chan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li
  • Volume
    34
  • Issue
    11
  • fYear
    1998
  • fDate
    5/28/1998 12:00:00 AM
  • Firstpage
    1142
  • Lastpage
    1143
  • Abstract
    Transimpedance amplifiers fabricated with InAlAs/InGaAs doped-channel field effect transistors (DCFETs) are demonstrated. Owing to the high linearity of the DCFET device performance, this amplifier circuit shows a wide dynamic range in gain profile, indicating great promise for driving the next generation circuits in communication systems. The transimpedance gain is as high as 460 Ω and the maximum bandwidth 7.3 GHz
  • Keywords
    III-V semiconductors; JFET circuits; aluminium compounds; amplifiers; gallium arsenide; indium compounds; 7.3 GHz; In0.52Al0.48As-In0.53Ga0.47 As; InAlAs/InGaAs DCFET; bandwidth; circuit linearity; communication system; doped-channel heterostructure; dynamic range; gain; transimpedance amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980763
  • Filename
    684604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394556