DocumentCode
1394579
Title
Development of Gd-pMOSFET Dosimeter for Thermal Neutron Dosimetry
Author
Lee, Nam Ho ; Lee, Hyun Jin ; Hwang, Young Gwan ; Oh, Seung Chan ; Youk, Geun Uck
Author_Institution
Korea Atomic Energy Res. Inst., Daejeon, South Korea
Volume
57
Issue
6
fYear
2010
Firstpage
3489
Lastpage
3492
Abstract
Current neutron diodes for high energy neutron dosimetry are not sensitive to thermal neutrons. A set of pMOSFET dosimeters having a Gd (Gadolinium) layer for thermal neutron dosimetry has been developed and tested. The performance of Gd-pMOSFETs was tested at a low-energy neutron environment and a gamma ray environment to see net neutron response only. The resultant neutron response was distinguishable [2.5 mV/cGy(H2O)] and shows a reasonably linear relationship to the accumulated neutron dose.
Keywords
MOSFET; dosimeters; gadolinium; neutron effects; neutron flux; Gd-pMOSFET dosimeter; gadolinium; gamma ray environment; metal-oxide-silicon field effect transistor; neutron diodes; radiation effects; thermal neutron dosimetry; Dosimetry; MOSFETs; Neutrons; Dosimetry; metal-oxide-silicon field effect transistor (MOSFET); mixed-field; neutron;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2085451
Filename
5658027
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