Title :
Development of Gd-pMOSFET Dosimeter for Thermal Neutron Dosimetry
Author :
Lee, Nam Ho ; Lee, Hyun Jin ; Hwang, Young Gwan ; Oh, Seung Chan ; Youk, Geun Uck
Author_Institution :
Korea Atomic Energy Res. Inst., Daejeon, South Korea
Abstract :
Current neutron diodes for high energy neutron dosimetry are not sensitive to thermal neutrons. A set of pMOSFET dosimeters having a Gd (Gadolinium) layer for thermal neutron dosimetry has been developed and tested. The performance of Gd-pMOSFETs was tested at a low-energy neutron environment and a gamma ray environment to see net neutron response only. The resultant neutron response was distinguishable [2.5 mV/cGy(H2O)] and shows a reasonably linear relationship to the accumulated neutron dose.
Keywords :
MOSFET; dosimeters; gadolinium; neutron effects; neutron flux; Gd-pMOSFET dosimeter; gadolinium; gamma ray environment; metal-oxide-silicon field effect transistor; neutron diodes; radiation effects; thermal neutron dosimetry; Dosimetry; MOSFETs; Neutrons; Dosimetry; metal-oxide-silicon field effect transistor (MOSFET); mixed-field; neutron;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2085451
