• DocumentCode
    1394601
  • Title

    GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

  • Author

    Lee, Jong-Lam ; Kyoung Jin Choi

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea
  • Volume
    34
  • Issue
    11
  • fYear
    1998
  • fDate
    5/28/1998 12:00:00 AM
  • Firstpage
    1152
  • Lastpage
    1153
  • Abstract
    A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 μm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; rapid thermal annealing; semiconductor doping; sulphur; surface diffusion; (NH4)2S; (NH4)2Sx solution; 1 micron; 190 mS/mm; GaAs; GaAs MESFET fabrication; GaAs:S; RTA; S diffusion technique; rapid thermal annealing; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980819
  • Filename
    684611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394601