Title :
High-efficiency non-resonant cavity light-emitting diodes
Author :
Windisch, R. ; Heremans, Paul ; Dutta, Bahnishikha ; Kuijk, Maarten ; Kiesel, P. ; Dohler, Gottfried H. ; Borghs, G.
Author_Institution :
IMEC, Leuven
fDate :
5/28/1998 12:00:00 AM
Abstract :
860 nm surface-textured thin-film GaAs light-emitting diodes have been fabricated with a novel design which includes a selectively oxidised AlGaAs layer for current confinement. The highest reported external quantum efficiencies for injection currents below 0.3 mA are obtained. Furthermore, 20% external quantum efficiency for diodes with a current aperture of 12 μm is reported
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; thin film devices; 0.3 mA; 20 percent; 860 nm; GaAs active layer; GaAs-AlGaAs; current confinement layer; external quantum efficiencies; high-efficiency LED; injection currents; light-emitting diodes; nonresonant cavity LED; selectively oxidised AlGaAs layer; surface-textured thin-film LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980810
