• DocumentCode
    1394615
  • Title

    Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

  • Author

    Kuboyama, Satoshi ; Maru, Akifumu ; Ikeda, Naomi ; Hirao, Toshio ; Tamura, Takashi

  • Author_Institution
    Japan Aerosp. Exploration Agency, Tsukuba, Japan
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3257
  • Lastpage
    3261
  • Abstract
    It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.
  • Keywords
    dosimetry; ion beam effects; power MOSFET; anomalously large degradation; microdose damage; microdose effect; single heavy ion; single-event effects; trench type power MOSFET; Ions; MOSFETs; Single event upset; Heavy ions; microdose; power MOSFETs; single-event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2081686
  • Filename
    5658032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394615