Si-implanted subcollector heterojunction bipolar transistors

Author

Sun, M.H. ; Pierson, R.L. ; Chen, M.Y. ; Zampardi, P.J. ; Ho, M.C. ; McDermott, B.T. ; Fitzsimmons, S. ; Tiku, S. ; Lee, R.

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

Volume

34

Issue

11

fYear

1998

fDate

5/28/1998 12:00:00 AM

Firstpage

1155

Lastpage

1156

Abstract

AlGaAs/GaAs n-p-n heterojunction bipolar transistors (HBTs) fabricated using an Si-implant to form the subcollector followed by MOCVD growth of the remaining structure are demonstrated. The common emitter current gain of large test devices is ~50 at a collector current density of 1.9×10³ A/cm². The base-collector and emitter-base current ideality factors are 1.08 and 1.26, respectively. Co-implantation with Se reduced the subcollector sheet resistance to 13 Ω/□. Patterning of this implanted subcollector results in a significant reduction of extrinsic base-collector capacitance (C_hc)

Keywords

III-V semiconductors; aluminium compounds; capacitance; current density; gallium arsenide; heterojunction bipolar transistors; ion implantation; silicon; vapour phase epitaxial growth; AlGaAs-GaAs:Si,Se; AlGaAs/GaAs n-p-n HBT; MOCVD growth; Se implantation; Si implantation; Si-implanted subcollector; coimplantation; extrinsic base-collector capacitance; heterojunction bipolar transistors; implanted subcollector patterning; subcollector sheet resistance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980739

Filename

684613