Stacked inverter-based amplifier with bandwidth enhancement by inductive peaking

Author

Tarar, Mohsin Mumtaz ; Muh-Dey Wei ; Negra, Renato

Author_Institution

Dept. of High-Freq. Electron., RWTH Aachen Univ., Aachen, Germany

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents a stacked inverter-based amplifier in a commercial 65nm CMOS technology. The proposed amplifier, based on an inverter, uses stacking to achieve high output swing and distributed inductive peaking to obtain ultra-wide bandwidth. Furthermore, the proposed topology is generalized for more stacked transistors for high output swing requirement which then utilizes distributive peaking inductors to maintain that swing over a large bandwidth. The simulated output swing for a 2-, 4- and 6-stacked amplifier is 4.0 V, 6.5 V and 8.0 V with 3 dB-voltage bandwidth of 50 GHz, 43 GHz and 41.5 GHz, respectively. All transistors are regular RF MOSFETs with a 1.2 V supply voltage.

Keywords

CMOS analogue integrated circuits; MIMIC; MOSFET; amplifiers; inductors; invertors; millimetre wave amplifiers; 2-stacked amplifier; 4-stacked amplifier; 6-stacked amplifier; CMOS technology; bandwidth 41.5 GHz; bandwidth 43 GHz; bandwidth 50 GHz; distributed inductive peaking; gain 3 dB; output swing requirement; regular RF MOSFET; size 65 nm; stacked inverter-based amplifier; stacked transistor; ultrawide bandwidth enhancement; voltage 1.2 V; voltage 4.0 V; voltage 6.5 V; voltage 8.0 V; Bandwidth; CMOS integrated circuits; CMOS technology; Gain; MOS devices; Stacking; Transistors; Broadband High swing; Driver; Inductive peaking;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on

Conference_Location

Leuven

Type

conf

DOI

10.1109/INMMIC.2014.6815108

Filename

6815108