Title :
GaInAs photodiodes as transfer standards for picosecond measurements
Author :
Humphreys, D.A. ; Moseley, A.J.
Author_Institution :
NPL, Teddington, UK
fDate :
4/1/1988 12:00:00 AM
Abstract :
GaInAs photodiodes are developed for use as pulsed transfer standards at the optical fibre communications wavelengths. The concept and requirements for a transfer standard photodiode are discussed. The photodiode and mount are theoretically modelled, results indicate that there is an optimum epitaxial layer thickness and diode series resistance for a particular device diameter and mount inductance. Measurements are made of an unoptimised 45 μm diameter device mounted on a prototype reverse terminated coplanar holder. A measured FWHM of 40 ps was obtained at 1146 nm, and the 3 dB frequency response is measured as 10.8 GHz at 1060 nm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; 10.8 GHz; 1060 nm; 1146 nm; 40 ps; 45 micron; GaInAs photodiodes; device diameter; diode series resistance; epitaxial layer thickness; mount inductance; optical fibre communications wavelengths; picosecond measurements; pulsed transfer standards; semiconductors;
Journal_Title :
Optoelectronics, IEE Proceedings J