• DocumentCode
    1394698
  • Title

    Radiation Studies of Power LDMOS Devices for High Energy Physics Applications

  • Author

    Díez, Sergio ; Ullán, Miguel ; Pellegrini, Giulio ; Lozano, Manuel ; Sorge, Roland ; Knoll, Dieter

  • Author_Institution
    Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3322
  • Lastpage
    3328
  • Abstract
    We present radiation hardness studies performed on LDMOS devices included in a 0.25 μm SiGe BiCMOS technology from IHP Microelectronics. Results show degradation of devices performances only beyond 1 × 1015 neq/cm2.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; nuclear electronics; power integrated circuits; power semiconductor devices; radiation hardening (electronics); IHP microelectronics; SiGe; SiGe BiCMOS technology; high energy physics; power LDMOS device; radiation hardness; size 0.25 mum; BiCMOS integrated circuits; Power semiconductor devices; Radiation effects; Radiation hardening; ATLAS upgrade; LDMOS; displacement damage; power devices; radiation effects; super-LHC;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2085051
  • Filename
    5658045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394698