Title :
Characteristics of InAsP/InGaAsP edge emitting laser diodes obtained by localised fusion on GaAs substrates
Author :
Syrbu, A.V. ; Fernandez, J. ; Behrend, J. ; Sagalowicz, L. ; Iakovlev, V.P. ; Carlin, J.-F. ; Berseth, C.-A. ; Rudra, A. ; Kapon, E.
Author_Institution :
Dept. de Phys., Ecole Polytech. Fed. de Lausanne, Switzerland
fDate :
11/6/1997 12:00:00 AM
Abstract :
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth
Keywords :
III-V semiconductors; annealing; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; wafer bonding; CBE grown LDs; GaAs; GaAs substrates; InAsP-InGaAsP; N environment; N2; chemical beam epitaxy; edge emitting laser diodes; high quality fused interfaces; localised fusion; low temperature growth; point defects; quantum well disordering; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971369
