• DocumentCode
    1394719
  • Title

    An Adaptive Grid Scheme for Single-Event Upset Device Simulations

  • Author

    Cummings, Daniel J. ; Park, Hyunwoo ; Thompson, Scott E. ; Law, Mark E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3239
  • Lastpage
    3244
  • Abstract
    An adaptive grid scheme for single-event upset device simulations is presented. Single-event transient simulations for a reverse-biased N + /P diode and nMOSFET were performed using the adaptive grid scheme, a customized grid scheme and a uniform grid scheme. Results show that adaptive gridding can offer significant simulation time savings while preserving accuracy.
  • Keywords
    MOSFET; semiconductor device models; semiconductor diodes; adaptive grid scheme; charge collection; customized grid scheme; nMOSFET; reverse-biased diode; single-event transient simulations; single-event upset device simulations; Adaptive systems; MOSFETs; Simulation; Single event upset; Adaptive grid; charge collection; device simulation; single-event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2080688
  • Filename
    5658048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394719