Probing the Nature of Intermittently Stuck Bits in Dynamic RAM Cells

A new method is presented and demonstrated to quantify the leakage currents in Intermittently Stuck Bits (ISB´s) in SDRAM´s, which have been exposed to neutron or proton irradiation. It is argued that these ISB´s are caused by Single Particle Displacement Damage Effects (SPDDE´s), in the form of displacement damage complexes comprising one or more damage clusters. The leakage current histories of ISB´s are compared with a model of the behavior of the displacement damage complexes believed to cause the ISB´s.