A RHBD LC-Tank Oscillator Design Tolerant to Single-Event Transients

Author

Wang, Tao ; Wang, Kuande ; Chen, Li ; Dinh, Anh ; Bhuva, Bharat ; Shuler, Robert

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Saskatchewan, Saskatoon, SK, Canada

Volume

57

Issue

6

fYear

2010

Firstpage

3620

Lastpage

3625

Abstract

A single-event transients (SETs) tolerant LC-tank oscillator was designed, simulated, and fabricated using CMOS 90 nm technology. The simulation and experimental results indicate that the bias current of the oscillator greatly affects the SET-tolerance of an LC-tank oscillator. Adding a decoupling resistor to the bias circuit is an effective way to mitigate the effect of SETs to the oscillator. Laser testing and simulation results show significant reduction in the SET-induced amplitude and phase shifts of the VCO output.

Keywords

CMOS analogue integrated circuits; integrated circuit design; radiation hardening (electronics); resistors; voltage-controlled oscillators; CMOS technology; RHBD LC-tank oscillator; SET; SET-induced amplitude shifts; SET-induced phase shifts; VCO output; bias circuit; bias current; decoupling resistor; laser simulation; laser testing; radiation-hardened-by-design; single-event transients; size 90 nm; voltage-controlled oscillator; Radiation hardening; Single event transient; Voltage-controlled oscillators; LC-tank voltage-controlled oscillator (VCO); radiation-hardened-by-design (RHBD); single-event transients (SETs);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2084593

Filename

5658053