Title :
Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2
Author :
Paillet, P. ; Touron, J.L. ; Leray, J.L. ; Cirba, C. ; Michez, A.
Author_Institution :
CEA, Bruyeres-le-Chatel, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO2 have been determined by finite element simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO2 structures
Keywords :
MIS devices; electron traps; elemental semiconductors; finite element analysis; radiation effects; silicon; silicon compounds; MOS devices; charge detrapping measurements; energy levels; finite element simulation; multi-level radiation-induced charge trapping; post-irradiation effects; thermally activated phenomena; Charge carrier processes; Current measurement; Differential equations; Electron mobility; Electron traps; Energy states; Finite element methods; Photonic band gap; Poisson equations; Spontaneous emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
