DocumentCode :
1394766
Title :
A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal
Author :
Kanyogoro, Nderitu ; Buchner, Stephen ; McMorrow, Dale ; Hughes, Harold ; Liu, Michael S. ; Hurst, Al ; Carpasso, Charles
Author_Institution :
GTEC, Crofton, MD, USA
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3414
Lastpage :
3418
Abstract :
A novel methodology for completely removing the silicon substrate of SOI devices for single-event effects testing is introduced and demonstrated using a 90 nm, 4 Mb SRAM test vehicle. Applications and significance are discussed.
Keywords :
CMOS integrated circuits; SRAM chips; ion beam effects; laser beam effects; nuclear electronics; silicon-on-insulator; CMOS/SOI SRAM substrate removal; SRAM test vehicle; heavy ion irradiation; pulsed laser irradiation; single event effect testing; SRAM chips; Silicon on insulator technology; Single event upset; Substrates; Heavy ions; SRAM; laser; silicon substrate; single-event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2085450
Filename :
5658055
Link To Document :
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