• DocumentCode
    1394772
  • Title

    Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs

  • Author

    Cannon, E.H. ; Cabanas-Holmen, M. ; Wert, J. ; Amort, T. ; Brees, R. ; Koehn, J. ; Meaker, B. ; Normand, E.

  • Author_Institution
    Boeing Co., Seattle, WA, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3493
  • Lastpage
    3499
  • Abstract
    We measure the sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardened by design techniques that impact SEU sensitivity.
  • Keywords
    SRAM chips; integrated circuit design; radiation effects; RHBD SRAM; SEE sensitivity; SEU sensitivity; design techniques; direct ionization; high-energy proton; low-energy proton; proton radiation effects; single-event upsets; Ionization; Proton radiation effects; Radiation effects; Radiation hardening; Single event upset; Direct ionization; proton radiation effects; radiation effects; single event upset; single-event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2086482
  • Filename
    5658056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394772