• DocumentCode
    1394797
  • Title

    Irradiation effects in ultrathin Si/SiO2 structures

  • Author

    Cantin, J.L. ; von Bardeleben, H.J. ; Autran, J.L.

  • Author_Institution
    Groupe de Phys. des Solides, CNRS, Paris, France
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1407
  • Lastpage
    1411
  • Abstract
    The total dose response of Si/SiO2 structures with ultrathin (20-40 Å) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states
  • Keywords
    X-ray effects; elemental semiconductors; paramagnetic resonance; passivation; semiconductor-insulator boundaries; silicon; silicon compounds; EPR spectroscopy; Si-SiO2; Si/SiO2 structure; interface defect passivation; irradiation effects; porous silicon substrate; total dose response; ultrathin thermal oxide layer; Current measurement; Electric variables; Electric variables measurement; Electrons; Hydrogen; Paramagnetic materials; Paramagnetic resonance; Passivation; Silicon; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685215
  • Filename
    685215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394797