Title :
Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits
Author :
Dupont-Nivet, E. ; Cole, Y.M. ; Flament, O. ; Tine, F.
Author_Institution :
CEA, Bruyeres-le-Chatel, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. We present, here, a new method to measure and analyse this effect together with a simple model. We also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. We show that it explains some of the upsets observed in a SRAM embedded in an ASIC
Keywords :
CMOS memory circuits; SRAM chips; X-ray effects; application specific integrated circuits; integrated circuit interconnections; photoconductivity; radiation hardening (electronics); silicon-on-insulator; ASIC; CMOS/SOI integrated circuit interconnection; SRAM; X-ray irradiation; dose rate hardening; flip-flop; insulator photocurrent; memory; CMOS integrated circuits; CMOS memory circuits; Flip-flops; Insulation; Integrated circuit interconnections; Integrated circuit measurements; Photoconductivity; Pulse circuits; Semiconductor device modeling; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
