Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits

Author

Dupont-Nivet, E. ; Cole, Y.M. ; Flament, O. ; Tine, F.

Author_Institution

CEA, Bruyeres-le-Chatel, France

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1412

Lastpage

1419

Abstract

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. We present, here, a new method to measure and analyse this effect together with a simple model. We also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. We show that it explains some of the upsets observed in a SRAM embedded in an ASIC

Keywords

CMOS memory circuits; SRAM chips; X-ray effects; application specific integrated circuits; integrated circuit interconnections; photoconductivity; radiation hardening (electronics); silicon-on-insulator; ASIC; CMOS/SOI integrated circuit interconnection; SRAM; X-ray irradiation; dose rate hardening; flip-flop; insulator photocurrent; memory; CMOS integrated circuits; CMOS memory circuits; Flip-flops; Insulation; Integrated circuit interconnections; Integrated circuit measurements; Photoconductivity; Pulse circuits; Semiconductor device modeling; X-rays;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.685216

Filename

685216