DocumentCode :
1394820
Title :
Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits
Author :
Pease, Ronald L. ; Shaneyfelt, Marty ; Winokur, Peter ; Fleetwood, Dan ; Gorelick, Jerry ; McClure, Steve ; Clark, Steve ; Cohn, Lew ; Alexander, Dave
Author_Institution :
RLP Res., Albuquerque, NM, USA
Volume :
45
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
1425
Lastpage :
1430
Abstract :
The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS
Keywords :
bipolar analogue integrated circuits; gamma-ray effects; thermal stresses; bipolar linear microcircuit; ionizing radiation response; preirradiation thermal stress; semiconductor process technology; total dose sensitivity; CMOS technology; Ceramics; Laboratories; MOSFETs; Plastic packaging; Radiation hardening; Space technology; Temperature; Thermal stresses; Weapons;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.685218
Filename :
685218
Link To Document :
بازگشت