Comparison of total dose responses on high resolution analog-to-digital converter technologies

Author

Lee, C.I. ; Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1444

Lastpage

1449

Abstract

Two different 12-bit analog-to-digital converter technologies, CMOS and BiCMOS, from Burr-Brown were compared for total dose responses. The BiCMOS converter appears to be a better candidate for space applications. CMOS devices showed larger degradation with both high dose rate (HDR) and low dose rate (LDR). An external voltage reference can be used for a radiation hardened process 12-bit converter from Analog Devices to maintain accuracy up to 1 Mrad(Si). DATEL´s 16-bit hybrid converter showed a low failure level with HDR

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; analogue-digital conversion; radiation hardening (electronics); 1 Mrad; 12 bit; 16 bit; Analog Devices; BiCMOS technology; Burr-Brown; CMOS technology; DATEL; analog-to-digital converter; degradation; failure; high dose rate; hybrid technology; low dose rate; radiation hardening; space application; total dose response; voltage reference; Analog-digital conversion; BiCMOS integrated circuits; CMOS technology; Energy consumption; Laboratories; Propulsion; Radiation hardening; Space technology; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.685221

Filename

685221