Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology

Author

Virmontois, Cedric ; Goiffon, Vincent ; Magnan, Pierre ; Girard, Sylvain ; Inguimbert, Christophe ; Petit, Sophie ; Rolland, Guy ; Saint-Pe, Olivier

Author_Institution

ISAE, Univ. de Toulouse, Toulouse, France

Volume

57

Issue

6

fYear

2010

Firstpage

3101

Lastpage

3108

Abstract

Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.

Keywords

CMOS image sensors; annealing; dark conductivity; neutron effects; photodiodes; proton effects; CMOS image sensors; GEANT 4 calculations; annealing analysis; dark current behavior; dark current histogram; dark current nonuniformity; deep submicron technology; displacement damage effects; isolated photodiodes; mean dark current increase; neutron effects; pixel arrays; proton irradiation effects; Active pixel sensors; CMOS image sensors; Dark current; Ionization; Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage; hot pixels; ionization; monolithic active pixel sensor (MAPS); non-ionizing energy loss (NIEL);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2085448

Filename

5658069