DocumentCode
1394858
Title
High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
Author
Carrano, J.C. ; Li, T. ; Grudowski, P.A. ; Eiting, C.J. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
33
Issue
23
fYear
1997
fDate
11/6/1997 12:00:00 AM
Firstpage
1980
Lastpage
1981
Abstract
The authors report a GaN metal-semiconductor-metal photodetector with high quantum efficiency (~50%) in the absence of internal gain. These photodetectors have a flat responsivity above the bandgap (measured at ~0.15 A/W) with a sharp, solar blind cutoff at the band edge. There is no discernible responsivity for photons below the bandgap energy. In addition, a very low dark current was obtained, measured at ~800 fA at ~10 V reverse bias
Keywords
III-V semiconductors; dark conductivity; gallium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor epitaxial layers; ultraviolet detectors; -10 V; 50 percent; 800 fA; GaN; band edge; bandgap; bandgap energy; dark current; flat responsivity; metal-semiconductor-metal photodetectors; quantum efficiency; reverse bias; single-crystal epitaxial layers; solar blind cutoff; ultraviolet photodetectors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971322
Filename
640478
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