• DocumentCode
    1394876
  • Title

    Strategies for MilliRad sensitivity in PMOS dosimeters

  • Author

    Conneely, C. ; O´Connell, B. ; Hurley, P. ; Lane, W. ; Adams, L.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Cork, Ireland
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1475
  • Lastpage
    1480
  • Abstract
    Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved
  • Keywords
    MOSFET; compensation; dosimeters; semiconductor device noise; silicon radiation detectors; MilliRad sensitivity; PMOS dosimeter; RADFET; design; signal/noise ratio; temperature compensation; thermal effects; Costs; Implants; Low-frequency noise; Microelectronics; Noise generators; Noise measurement; Packaging; Personnel; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685226
  • Filename
    685226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394876