• DocumentCode
    1394888
  • Title

    GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy

  • Author

    Guha, Saikat ; Bojarczuk, N.A.

  • Author_Institution
    Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
  • Volume
    33
  • Issue
    23
  • fYear
    1997
  • fDate
    11/6/1997 12:00:00 AM
  • Firstpage
    1986
  • Lastpage
    1987
  • Abstract
    The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 nm in the current injection range of 20-65 A/cm2 at 5-7.5 volts
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; 5 to 7.5 V; 500 to 550 nm; GaN based LED; GaN-Si; MBE; Si; Si(111); electroluminescence; electron injection; light emitting diodes; molecular beam epitaxy; n-type Si substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971312
  • Filename
    640482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394888