DocumentCode :
1394894
Title :
Growth of low resistivity p-type GaN by metal organic chemical vapour deposition
Author :
Eiting, C.J. ; Grudowski, P.A. ; Dupuis, Russell
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume :
33
Issue :
23
fYear :
1997
fDate :
11/6/1997 12:00:00 AM
Firstpage :
1987
Lastpage :
1989
Abstract :
Mg-doped GaN epitaxial layers were grown on (0001) sapphire by metal organic chemical vapour deposition and were characterised by room-temperature and variable-temperature Hall-effect measurements. The authors report an in-situ Mg acceptor activation procedure which occurs in a N2 ambient during the post-growth cool-down cycle. GaN:Mg films with a wide range of free-hole concentrations and electrical resistivities have been grown by varying the Mg precursor molar flow rate, the growth pressure, and the growth temperature. The highest 300 K free hole concentrations achieved were p≃2.2×10 18 cm-3 with mobilities μp≃2.2 cm2/Vs
Keywords :
Hall effect; III-V semiconductors; annealing; electrical resistivity; gallium compounds; hole density; hole mobility; magnesium; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; (0001) sapphire; Al2O3; GaN:Mg films; GaN:Mg-Al2O3; Hall-effect measurements; MOCVD growth; Mg precursor molar flow rate variation; Mg-doped GaN epitaxial layers; N2; N2 ambient; acceptor activation anneal; chemical vapour deposition; electrical resistivities; free-hole concentrations; growth pressure variation; growth temperature variation; in-situ Mg acceptor activation procedure; low resistivity p-type GaN; metal organic CVD; post-growth cool-down cycle;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971257
Filename :
640483
Link To Document :
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