Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy

The authors report a 600 nm range resonant cavity light emitting diode, grown by solid source molecular beam epitaxy. The device consisted of a 1λ thick AlGaInP active region surrounded by AlGaAs-based distributed Bragg reflectors. The current aperture of the device was formed by lateral selective wet thermal oxidation. A record continuous-wave output power of 1.1 mW, with 5.3 nm linewidth and a peak external quantum efficiency of 2.0%, was attained from the device with an 80 μm exit window. The spectrum remained almost unaffected by temperature variations