In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons

Author

Taylor, E.W. ; Paxton, A.H. ; Schone, H. ; Carson, R.F. ; Bristow, J. ; Lehman, J.A. ; Hibbs-Brenner, M.K. ; Morgan, R.A. ; Marta, T.

Author_Institution

Phillips Lab., US Air Force, Kirtland AFB, NM, USA

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1514

Lastpage

1517

Abstract

Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; nonradiative transitions; proton effects; quantum well lasers; surface emitting lasers; 1.9 MGy; 4.5 MeV; 850 nm; AlGaAs; AlGaAs vertical cavity surface emitting laser; in vacuo response; nonradiative carrier recombination; proton irradiation; quantum well VCSEL; scanning ion microbeam; space application; Laboratories; Laser beams; Mirrors; Photonics; Protons; Quantum well lasers; Space technology; Surface emitting lasers; USA Councils; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.685232

Filename

685232