Title :
Comparison between observed and theoretically determined SEU rates in the TEXAS TMS4416 DRAMs on-board the UoSAT-2 micro-satellite
Author :
Oldfield, M.K. ; Underwood, C.I.
Author_Institution :
Centre for Satellite Eng. Res., Surrey Univ., Guildford, UK
fDate :
6/1/1998 12:00:00 AM
Abstract :
A single event upset (SEU) prediction tool, PRISM (Protons in Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device
Keywords :
DRAM chips; artificial satellites; proton effects; space vehicle electronics; MBU rate; PRISM; SEU rate; Texas TMS4416 DRAM; UoSAT-2 micro-satellite; multiple-bit upset; proton irradiation; semiconductor material; single event upset; Design engineering; Digital communication; Error correction codes; Low earth orbit satellites; MOS devices; Payloads; Predictive models; Protons; Random access memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
