• DocumentCode
    1395039
  • Title

    SEU sensitive depth in a submicron SRAM technology

  • Author

    Detcheverry, C. ; Ecoffet, R. ; Duzellier, S. ; Lorfevre, E. ; Bruguier, G. ; Barak, J. ; Lifshitz, Y. ; Palau, J.M. ; Casiot, J.

  • Author_Institution
    Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1612
  • Lastpage
    1616
  • Abstract
    This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 μm SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions depositing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions depositing higher energies (at greater LET)
  • Keywords
    SRAM chips; integrated circuit technology; ion beam effects; 0.6 micron; LET; SEU sensitive depth; critical energy; energy deposition; heavy ion irradiation; simulation; submicron SRAM technology; Analytical models; CMOS technology; Circuit simulation; Context modeling; Error analysis; Extraterrestrial phenomena; Random access memory; Single event upset; Space technology; Switches;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685248
  • Filename
    685248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1395039