• DocumentCode
    1395052
  • Title

    SEB occurrence in a VIP: Influence of the epi-substrate junction

  • Author

    Lorfévre, Eric ; Sudre, Christophe ; Dachs, Charles ; Detcheverry, Céline ; Palau, Jean-Marie ; Gasiot, Jean ; Calvet, Marie-Catherine ; Garnie, J. ; Ecoffet, Robert

  • Author_Institution
    Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1624
  • Lastpage
    1627
  • Abstract
    Heavy ion induced burnout is reported for the first time in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence
  • Keywords
    failure analysis; integrated circuit modelling; ion beam effects; power integrated circuits; semiconductor epitaxial layers; 2D simulation; SEB; VIP; epi-substrate junction; heavy ion induced burnout; single event burnout; vertical intelligent power; Circuits; Failure analysis; Ion accelerators; MOS devices; MOSFETs; Nuclear physics; Performance evaluation; Power supplies; Testing; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685250
  • Filename
    685250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1395052