DocumentCode :
1395059
Title :
In-flight and ground testing of single event upset sensitivity in static RAMs
Author :
Johansson, Karin ; Dyreklev, Peter ; Granbom, Bo ; Calver, M.C. ; Fourtine, Stephane ; Feuillatre, Odile
Author_Institution :
Ericsson Saab Avionics AB, Linkoping, Sweden
Volume :
45
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
1628
Lastpage :
1632
Abstract :
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources
Keywords :
SRAM chips; avionics; cosmic ray interactions; cosmic ray neutrons; neutron effects; CUTE; SEU; SRAM; aircraft; atmospheric radiation environment; ground testing; in-flight measurement; neutron irradiation; single event upset sensitivity; static random access memory; Aerospace electronics; Aircraft; Atmospheric measurements; Neutrons; Random access memory; Read-write memory; SRAM chips; Single event upset; Test equipment; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.685251
Filename :
685251
Link To Document :
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