DocumentCode
1395059
Title
In-flight and ground testing of single event upset sensitivity in static RAMs
Author
Johansson, Karin ; Dyreklev, Peter ; Granbom, Bo ; Calver, M.C. ; Fourtine, Stephane ; Feuillatre, Odile
Author_Institution
Ericsson Saab Avionics AB, Linkoping, Sweden
Volume
45
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
1628
Lastpage
1632
Abstract
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources
Keywords
SRAM chips; avionics; cosmic ray interactions; cosmic ray neutrons; neutron effects; CUTE; SEU; SRAM; aircraft; atmospheric radiation environment; ground testing; in-flight measurement; neutron irradiation; single event upset sensitivity; static random access memory; Aerospace electronics; Aircraft; Atmospheric measurements; Neutrons; Random access memory; Read-write memory; SRAM chips; Single event upset; Test equipment; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.685251
Filename
685251
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