The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6-μm) lasers and LEDs

We describe the metal-organic chemical vapor deposition (MOCVD) growth of AlAs_1-xSb_x cladding layers and InAsSb-InAs multiple-quantum well (MQW) and InAsSb-InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. The AlAs_1-xSb_x cladding layers were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. By changing the layer thickness and composition of SLSs and MQWs, we have prepared structures with low temperature (<20 K) photoluminescence wavelengths ranging from 3.2 to 6.0 μm. We have made gain-guided injection lasers using undoped p-type AlAs_0.16Sb_0.84 for optical confinement and both strained InAsSb-InAs MQW and InAsSb-InAsP SLS active regions. The lasers and light emitting diodes (LEDs) utilize the semi-metal properties of a GaAsSb(p)-InAs(n) heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb-InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8-3.9 μm and a characteristic temperature of 29-40 K. We also present results for both optically pumped and injection lasers with InAsSb-InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7-μm strained-layer superlattice (SLS) laser was 240 K. An SLS LED emitted at 4.0 μm with 80 μW of power at 300 K