DocumentCode
1395091
Title
Hydride vapor phase epitaxy revisited
Author
Lourdudoss, Sebastian ; Kjebon, Olle
Author_Institution
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Volume
3
Issue
3
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
749
Lastpage
767
Abstract
The salient features of hydride vapor phase epitaxy (HYPE) process in the fabrication of optoelectronic devices are demonstrated by combining the state of the art results of several groups working in this field
Keywords
optical fabrication; optoelectronic devices; semiconductor growth; vapour phase epitaxial growth; HYPE process; hydride vapor phase epitaxy; optoelectronic device fabrication; vapour phase epitaxy; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Laboratories; Molecular beam epitaxial growth; Nanostructures; Optical device fabrication; Optoelectronic devices; Semiconductor materials;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.640630
Filename
640630
Link To Document